Dr. Kirill Mitrofanov graduated from Ryazan State Radio Engineering Institute in 2008. In 2012 he defended his thesis on chalcogenide semiconductors phase change process parameters. From the August of 2012 he began to work as a postdoctoral fellow in the Functional Materials Group (currently Systematic Materials Design Group) of the Nanoelectronics Research Institute in the National Institute for Advanced Industrial Science and Technology (AIST) located in Tsukuba, Japan. Dr. Mitrofanov has extensive experience in x-ray absorption near edge structure and extended x-ray absorption fine structure experimental techniques within multiple experimental proposals at SPring-8 synchrotron on such issues as resistivity drift in phase-change memory and atomic and the electronic structure of topological crystalline insulators. Dr. Mitrofanov also studied ultrafast processes in chalcogenide phase-change materials using ultra-fast time-resolved diffraction using a hard x-ray free electron laser. Currently Dr. Mitrofanov works on the development of phase-change random access memory based on Ge-Sb-Te compounds and interfacial phase-change memory devices based on chalcogenide superlattices.