Description
Date/Time: 04-05-2018 - Thursday - 05:00 PM - 07:00 PM
Hyungsub Woo1 Seunghoon Nam2 Byungwoo Park1

1, Seoul National University, Seoul, , Korea (the Republic of)
2, Korea Institute of Machinery & Materials (KIMM), Daejeon, , Korea (the Republic of)

Silicon has been focused as a promising anode material due to its high theoretical capacity (3579 mAh g-1). However, it suffers from capacity degradation due to the evolution of fractures in the electrode caused by the volume expansion of Si (~300%) during cycling [1]. To overcome this problem, water-soluble polymers have been suggested as alternatives of a traditional PVDF-binder system for improving the mechanical stability and electrochemical properties of Si through their strong interaction capabilities between active materials and binder [2-4]. Herein, we first introduce the polyacrylamide (PAM) hydrogel as a new binder system, which has a good capacity for preserving their mechanical strength and shape with abundant polar-functional groups in their structure. For the 3D-polymer network in the electrode, we applied in situ polymerization method during the electrode fabrication. Through this 3D PAM network, the composite electrode exhibited a great capacity retention of ~2000 mAh g-1 after 300 cycles. Accordingly, the effect of the chemical/mechanical properties of PAM gel on the electrochemical properties of Si is adequately elucidated, and these results are properly applied for the design as a novel binder system in the Si anode.

[1] U. Kasavajjula, C. Wang, and A. J. Appleby, J. Power Sources 163, 1003 (2007).
[2] J. Li, R. B. Lewis, and J. R. Dahn, Electrochem. Solid-State Lett. 10, A17 (2007).
[3] A. Magasinski, B. Zdyrko, I. Kobalenko, B. Hertzberg, R. Burtovyy, C. F. Huebner, T. F. Fuller, I. Luzinov, and G. Yushin, ACS Appl. Mater. Interfaces 11, 3004 (2010).
[4] I. Kovalenko, B. Zdyrko, A. Magasinski, B. Hertzberg, Z. Milicev, R. Burtovyy, I. Luzinov, and G. Yushin, Science 334, 75 (2011).

Meeting Program
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5:00 PM–7:00 PM Apr 5, 2018

PCC North, 300 Level, Exhibit Hall C-E