Date/Time: 04-04-2018 - Wednesday - 05:00 PM - 07:00 PM
Yunlei Zhao1 Zhiqiang Chen2 Hongliang Dong2 Yu Deng1

1, Nanjing University, Nanjing, , China
2, Center for High Pressure Science and Technology Advanced Research, Shanghai, , China

The ferroelectrics nanostructures have numerous applications such as the electronic, magnetoelectric, photovoltaic, actuator and the nonvolatile memory ones [1-7]. For them, the stress-induced multi-phase coexistence such as morphtropic phase boundary (MPB) and thermaltropic phae boundary (TPB) can dramatically enhance their piezoelectricity and flexibility [2,5], leading to attractive potential applications. To understand the mechanism of the stress-induced multi-phase coexistence, we performed high-pressure in-situ transmission electron microscopy (TEM) and Diamond Anvil Cell (DAC) Raman scattering studies, on the series of nanometer free-standing single crystal (i.e clamping-effect-free and dislocation-free) samples prepared by an improved FIB methods.

This work has been supported by the Natural Science Foundation of Jiangsu Province,China (Grant No.BK20151382) , and the National Center for Electron Microscopy of Molecular Foundry at Lawrence Berkeley National Laboratory, for the support under the DOE Grant for user facilities.

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