Organic-inorganic halide perovskites are a rising star in the optoelectronic community having excellent properties suitable for photovoltaic, light detection and light emission applications. However, the wide band gap nature of commonly used methyl ammonium lead halide perovskites has no photosensitivity at near-infrared wavelengths beyond 800nm, thus limiting their applications. Recently, partial substitution of Pb by tin (Sn) in organic–inorganic lead halide perovskites has been demonstrated as an effective way to reduce the bandgap of halide perovskites. By utilizing anti-solvent dripping process during perovskite film deposition, a mixed Pb-Sn perovskite (MAPbI3)0.4(FaSnI3)0.6, has been synthesized with a bandgap of 1.25eV, thus extending its absorption spectrum beyond 1000 nm. In this study, we investigated the influence of various anti-solvents including diethyl ether, chloroform, and toluene on the Sn-contained low-bandgap halide perovskite films and their device performance including IR photodetectors and solar cells.