Sb2Se3 possesses a great potential for low-cost and high-efficiency thin film photovoltaic, with a suitable bandgap, high absorption coefficient, benign grain boundaries and earth-abundant constituents. However, the efficiency improvement of Sb2Se3 thin film solar cells was severely restricted by the absorber quality and the trap-assisted recombination caused by the deep defects in the absorber. Herein, we developed a vapor transfer deposition (VTD) technique to fabricate Sb2Se3 films, which highly enhanced the performance of Sb2Se3 solar cells. After the optimization, we significantly enhanced the superstrate CdS/Sb2Se3 solar cells with certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyzed the deep defects in the devices and found that the density of the dominant deep defects was reduced by one order of magnitude using VTD process. Furthermore, the VTD fabricated devices showed fewer interface defects, longer carrier lifetime, and then better performance, compared with the devices fabricated by rapid thermal evaporation. These encouraging results promote the development of Sb2Se3 solar cells in high-efficiency thin film photovoltaic devices.