High quality WS2 film with the single domain size up to 400 microns was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, gas flow rate and so on. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single-domains with an average size over 100 microns. Raman spectra, atomic force microscopy and transmission electron microscopy provided direct evidence that the WS2 film had an atomic-layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area controllable preparation of atomic-thickness tungsten disulfide thin film, and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film.