Area-selective positioning of organic/inorganic/hybrid thin films with high selectivity has been considered a long-lasting goal especially for high-performance in micro/nanoscale device applications. In general, for the patterning of functional thin films, there are several essential steps such as coating of hard mask, patterning, etching, and removing of the mask, which can often alter the fundamental properties. Here, we introduce a useful patterning method for thin film positioning, which can both realize selective positioning and exempt the requirement of a subsequent lift-off step. This advancement is use of chemical template with different surface energies and temperature-controlled spin-casting, called cold spin-casting (CSC). We found that sub-microscale area selectivity of sub-10 nm nanostructured block copolymer thin films increased through this CSC method, the optimized solution temperature was –5 degrees Celsius. This method is applicable to a case in microscale positioning of inorganic materials such as CdSe quantum dot solutions. This CSC method may suggest a new way for formation of two-dimensional nanoscale complex pattern customization.