Carbon nanofibers amongst other one dimensional nanostructures such as carbon nanotubes, nanowires have been used in wide potential applications such as sensors, high strength and light materials, supercapacitors and dye sensitized solar cells. Carbon nanofibers were prepared by electrospinning polyacrylonitrile nanofibers (PAN) followed by stabilization and carbonization. We have carried out a detailed study on the electrical transport and Hall Effect measurements on carbon nanofibers annealed at different temperatures (700 °C–1400 °C). It has been observed that the ratio of the D to G peaks in Raman spectroscopy and the full width at half maximum (FWHM) of 100% peak (26 °) in the x-ray diffraction spectra decreases as the annealing temperature increases from 700 to 1400 °C, which suggests that the crystallinity of the carbon nanofibers increases as the temperature increases. Also, the diameter of the carbon nanofibers decreases from 51.17 nm to 15.89 nm as the annealing temperature increases from 700 °C to1400 °C. These nanofibers have been found to exhibit a semiconducting behavior in the temperature range of 350-10 K with their room temperature resistivity’s varying from 10 to 50 mOhm.cm. The Hall Effect measurements show that Hall coefficient value was cm3/C at 300 K for the carbonized nanofibers that were annealed at 1200 °C. The negative sign of the Hall coefficient suggests that the charge carrier is electron. The electron carrier concentration and their mobility were calculated to be 1.1 x 1020 /cm3 and 25.8 cm2/Vs, respectively. The value of electronic charge carrier concentration is almost an order of magnitude higher than the values reported for carbon nanofibers synthesized under similar conditions. Due to semiconducting nature of carbon nanofibers, superior carrier concentration, and carrier mobility, carbon nanofibers have the potential to be used in non-silicon based integrated circuits.