Date/Time: 04-04-2018 - Wednesday - 05:00 PM - 07:00 PM
Hocheon Yoo1 Seon Baek Lee1 Dong-Kyu Lee1 Edsger Smits2 Gerwin Gelinck2 Kilwon Cho1 Jae-Joon Kim1

1, Pohang University of Science and Technology, Pohang, , Korea (the Republic of)
2, Holst Centre, Eindhoven, , Netherlands

Split-gate ambipolar organic transistor technology has been proposed as a solution for simple and low-cost fabrication of complementary electronics. In a split gate device, the polarity of the transistor can be controlled. Depending on the voltage bias of an additional control gate, a unipolar type OTFT (p- or n-) can operate, exhibiting a large on/off current ratio. However, conventional split-gate ambipolar organic thin-film transistors suffer from operational instability including a large I-V hysteresis and high bias stress effects due to a charge trapping at the dielectric/semiconductor interface. Here we demonstrate that such issues can be solved with top-gate device geometry and non-planar split-gate architecture. The proposed device operates in a controllable unipolar n(or p)-type mode with more robust electrical characteristics including hysteresis-free I-V characteristics as well as higher bias stress stability than previous split-gate ambipolar devices. Furthermore, we also demonstrate that the device has higher hole and electron carrier mobilities.

Meeting Program

5:00 PM–7:00 PM Apr 4, 2018 (America - Denver)

PCC North, 300 Level, Exhibit Hall C-E