The performance of transistors utilizing 2D materials as the channel is typically limited by the contact resistance. Here, we investigate the efficiency of electron injection into monolayer MoS2 from a variety of potential contact metals. To keep the MoS2 channel properties consistent, a single CVD-grown sample of MoS2 on SiO2 was broken into four pieces. On each piece, multiple identically-sized transfer length method (TLM) devices for two different contact metals were fabricated and tested in a back-gated configuration. A total of eight metals were investigated including Ag, Au, Cr, Cu, In, Mo, Ni, and Ti. All contact metals were capped with a top layer of Au and samples were kept in a nitrogen environment until testing to limit oxidation of the contact and channel material. Devices were electrically tested in vacuum before and after a 45-hour anneal at 400 °K. Device metrics including contact resistance and maximum current were extracted to compare contact metal performance. Agreeing with metal-semiconductor work function theory, metals with a low work function (Ti, In, and Ag) demonstrated the best prospects as a contact metal to monolayer MoS2.