Yuanqing Chen^{1 2} Lingwei Li² Yang Song² Aditya Yerramilli¹ Yuxia Shen¹ Zhao Zhao¹ N. David Theodore^{1 3} Terry Alford^{1 4}

1, Arizona State University, Tempe, Arizona, United States
2, Xi'an University of Technology, Xi'an, , China
3, NXP Semiconductors, Chandler, Arizona, United States
4, African University of Science and Technology, Abuja, , Nigeria

A novel ultraviolet photochemical method was used to prepare amorphous TiO₂ resistive-switching films at low temperature. The ratio of on-state to off-state currents was measured, and a good value of 10³ was obtained. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching, and 1000 cycles of bending. Using the same method, we also prepared ZrO₂ flexible films with a high ratio of 10⁴ of on-state and off-state resistance. Especially, due to the fact that the precursor solution of ZrO₂ are photosensitive to UV light of 325-365nm, we obtained ZrO₂ arrays on the PET/ITO substrate using a method combined with UV exposure, solvent rinsing and UV photolysis processes. The ZrO₂ arrays showed excellent resistive properties, stable resistive switching behavior after being bent for 10³ times, and showed stable flexibility up to a minimum bending diameter of 1.25cm.