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Description
Sehmus Ozden1 Aditya Mohite1

1, Los Alamos National Laboratory, Los Alamos, New Mexico, United States

Abstract
Metal halide hybrid perovskites are a special class of perovskites with a general chemical formula of AMX3 formed by using low-temperature synthesis approaches. They exhibit exceptional fundamental properties that have been translated into proof-of-principle demonstrations of photovoltaics, light emitting diodes, photodetectors, thermoelectric devices, lasers, photo-catalysts and gamma-ray detectors. Among these, the application of photovoltaics has been the most studied with efficiencies exceeding 20%. The ability to control the crystal orientation of perovskites crystals is pivotal for achieving directional high mobility of charge carriers in the direction of the electrodes in optoelectronic devices. However, although there is tremendous progress on the synthesis of metal-halide hybrid perovskite films, it is still a great challenge to control the crystal orientation and anisotropy during crystal growth. In this study, we used a new method for synthesis of two-dimensional and three-dimensional perovskite films with control over crystal orientation to achieve a strong anisotropy of certain planes in the resultant thin film perovskites. We anticipate that this method could be applicable as a general method for the growth of thin film perovskites with any combination of the compounds (e.g. cations, divalent metals, and halides) that otherwise may be limited kinetically and also will allow for the tuning of their crystalline orientation based on the desired device functionalities.

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