EN02.08.21 : HTM-Free Perovskite Solar Cells Based on an Efficient Trap State Passivator Cu(mtsc)I

5:00 PM–7:00 PM Apr 4, 2018 (America - Denver)

PCC North, 300 Level, Exhibit Hall C-E

Jian Wen1 Liming Zhao1 Xianyong Zhou1 Baomin Xu1

1, Southern University of Science and Technology, Shenzhan, , China

A novel organic-inorganic hybrid perovskite CH3NH3PbX3 (X = Cl, Br, I) has emerged as a strong competitor in photovoltaic applications due to its superior characteristics including high absorption coefficient, broad absorption spectrum, tunable band gap, long carrier lifetime, high balanced hole and electron mobility, etc.[1, 2] The first embodiment of perovskite solar cells (PSCs) only demonstrated a power conversion efficiency (PCE) of 3.8%, which by now has been boosted to 22.1%.[3-4] However these PCEs have been obtained by using Spiro-OMeTAD as the hole-transporting material (HTM), which is too expensive for mass production. In this work, we designed an HTM-free PSC with the structure of ITO/Cu(mtsc)I-doped CH3NH3PbI3/PCBM/BCP/Ag. Cu(mtsc)I (mtsc: 2-methyl-3-thiosemicarbide) was first synthesized, and then doped into the precursor solution at an extremely low concentration to form a bulk heterojunction type perovskite layer ,and thus the HTM layer is not needed. After optimization, a PCE of 18.33% has been achieved on glass-substrate. Compared to the traditional p-type copper-based semiconductor such as CuI, Cu(mtsc)I has better energy level matching and is easier to form a chelate with the CH3NH3PbX3 material, resulting in much higher power conversion efficiencies.
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