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EN02.12.08 : Advance in High Performance Inverted Planar Heterojunction Perovskite Solar Cells

5:00 PM–7:00 PM Apr 5, 2018

PCC North, 300 Level, Exhibit Hall C-E

Description
Deying Luo1 2 Wenqiang Yang1 Qihuang Gong1 2 3 Rui Zhu1 2 3

1, Peking University, Beijing, , China
2, Collaborative Innovation Center of Quantum Matter, Beijing, , China
3, Shanxi University, Taiyuan, , China

Perovskite solar cells (PSCs) adopting inverted planar heterojunction architectures have attracted considerable attention because of the low-temperature solution processing of all functional layers, versatility of energy-band engineering, and a simplified device structure[1, 2]. However, their low power conversion efficiency (PCE) (typically <20%) in comparison to over 22% reported for the best cells based on mesoporous-TiO2 regular structure[3, 4], becomes a critical challenge for the future large-scale applications. To overcome these scientific challenges, we report that the mixed-cation perovskite films containing formamidinium have enabled to deposit onto the PTAA hole-selective contact layer by dual-source precursor solution, and this results in a rapid rise in PCE that exceeded 20%[5]. Subsequently, we further obtain more perfect perovskite films via controlling the defects densities both inside grain boundaries and at the surface, in case average Urbach energy of mixed-cation mixed-halide perovskite film is reduced to 14.2 meV. Ultimately, we’ve achieved over 21.5% PCE in inverted structure PSCs that is comparable to the regular perovskite solar cells containing mesoporous TiO2.

Reference:
[1] Y. Lin, L. Shen, J. Dai, Y. Deng, Y. Wu, Y. Bai, X. Zheng, J. Wang, Y. Fang, H. Wei, W. Ma, X.C. Zeng, X. Zhan, J. Huang, Adv. Mater., 2017, 29, 1604545.
[2] Y. Wu, X. Yang, W. Chen, Y. Yue, M. Cai, F. Xie, E. Bi, A. Islam, L. Han, Nat. Energy, 2016, 1, 16148.
[3] X. Zheng, B. Chen, J. Dai, Y. Fang, Y. Bai, Y. Lin, H. Wei, X. Zeng, J. Huang, Nat. Energy, 2017, 2, 17102.
[4] W. S. Yang, B. W. Park, E. H. Jung, N. J. Jeon, Y. C. Kim, D. U. Lee, S. S. Shin, J. Seo, E. K. Kim, J. H. Noh, S. I. Seok, Science, 2017, 356, 1376-1379.
[5] D. Luo, L. Zhao, J. Wu, Q. Hu, Y. Zhang, Z. Xu, Y. Liu, T. Liu, K. Chen, W. Yang, W. Zhang, R. Zhu, Q. Gong, Adv. Mater., 2017, 29, 1604758.

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