Semiconducting nanowires have been recognized as promising materials for high-performance electronics and optics where optical and electrical properties can be tuned individually, where the nanowires due to excellent light absorbing properties  have been suggested for future high efficiency solar cells [2, 3]. Especially, the geometrical shape of the NWs offers excellent light absorption.
In order to further optimize the performance of NWPV, and integrate them on Si in a tandem junction configuration, nanowires with dimensions corresponding to optimal light harvesting capability are necessary. We developed nano imprint lithography for patterning of catalytic metal particles with a diameter of 200 nm in a hexagonal pitch of 500 nm, for which synthesis was redeveloped since the metal particles were found to move during annealing, destroying pattern fidelity before nucleation. We found that a pre anneal and nucleation step was necessary to keep the particles in place during high temperature annealing to remove surface oxides. We intend to transfer these grown nanowires to a Si platform (existing PV), either by direct growth on Si PV, or by nanowire peel off in polymer, followed by transfer and electrical contacting, or by aerotaxy and alignment for transfer to Si. The optimal band gap in combination with Si is about 1.7 eV, where we identify GaInP and GaAsP as materials for development of nanowire pn junctions by doping, the heart in a solar cell.
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2. N. Anttu et al., Phys. Rev. B 83, 165431 (2011)
3. J. Kupec et al., Opt. Express 18, 27589 (2010)
4. Åberg et al, IEEE J. of Photov, 6, 185 (2016)