With the increasing demand for electricity and rising environmental awareness, emerging green energy has gradually been taken seriously in the world. Among this green trend, thermoelectric is one of them. In energy conversion process, the energy mainly lost in the form of heat flow. By using thermoelectric device, the waste of the heat can be reused. In this study, one-dimensional Sb-doped homologous In2O3(ZnO)m nanowires has been formed by the In ions treatment on the Sb-doped ZnO. The well-aligned Sb-doped homologous In2O3(ZnO)m nanaowires array is designed to to be the thermoelectric device. Unlike most of the papers just investigating the thermoelectric properties by a single nanowire, we tests the thermoelectric properties of the device as a sheet by forming well-aligned Sb-doped homologous In2O3(ZnO)m nanoarrays and compare thermoelectric properties with the pristine zinc oxide nanowire arrays, Sb-doped ZnO nanowires arrays and pure homologous In2O3(ZnO)m nanowires arrays. Finally, we will investigate the mechanisms of the changes of thermoelectric properties resulted from the data.