Daniel Ward1 Michael Marshall1 DeAnna Campbell1 Tzu-Ming Lu1 Lisa Tracy1 Justin Koepke1 David Scrymgeour1 Ezra Bussmann1 Shashank Misra1

1, Sandia National Laboratories, Albuquerque, New Mexico, United States

Phosphorous delta layer devices in silicon can be fabricated with atomic precision by performing hydrogen depassivation lithography using a scanning tunneling microscope (STM). To date, this process has not been thermally compatible with CMOS processing. We present a low temperature STM sample preparation that enables significant processing of devices prior to STM patterning. This preparation enables a CMOS compatible fabrication path that scales from the nanoscale STM patterned device to macroscopic bond pads using only optical lithography. Using low-temperature electrical transport, we demonstrate a high yield of delta-layer based, nanoscale electrical devices across numerous fabrication runs. This all-optical fabrication pathway enables much faster cycles of learning, opening the door to deeper understanding of fabricated devices and more ambitious process development.

This work was supported by the Laboratory Directed Research and Development Program at Sandia National Laboratories, and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. Sandia National Laboratories is managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy under contract DE-NA-0003525.