We report the development of high performance thick (Gd,Y)Ba2Cu3Ox tapes in a single pass using an Advanced Metal Organic Chemical Vapor Deposition (A-MOCVD) system. Record high critical current (Ic) of over 7200 A/cm at 30 K, 3 T (BIIc) has been achieved in heavily doped (15 mol. % Zr addition), 4.8 µm (Gd,Y)Ba2Cu3Ox tapes with a record high lift factor of ~11. This corresponds to an extremely high engineering current density (Je) of over 7000 A/mm2.
In addition, Ic of over 2100 A/4 mm at 4.2 K, 14 T (BIIc) has been achieved in heavily doped (15 mol. % Zr addition), 4.3 µm (Gd,Y)Ba2Cu3Ox tapes on IBAD- MgO/LMO substrates .It corresponds to a pinning force (Fp ) of 1.7 TN/m3 and an record engineering current density (Je) of over 5100 A/mm2 which is almost double of the highest value ever reported.
We attribute this achievement to excellent temperature control and laminar flow feasible in A-MOCVD, coupled with optimization of BaZrO3 nanocolumn growth parameters. High density of BaZrO3 nanocolumns of average size 4-5 nm and an average spacing of 18-19 nm between them contributes to superior flux pinning properties.
This work is supported by the Department of Energy Advanced Manufacturing Office and the Office of High Energy Physics.