We have developed a facile method to synthesize metal oxide semiconductors and by utilizing this unique strategy we have fabricated a photovoltaic cells with a few simple steps. Our method relies on electroplating the metal species (Cu and Zn in our case) and then annealing in different atmosphere (air in this case) to grow various semiconductor materials. This method is very promising when especially the large scale production is the particular interest because even most of the very expensive methods are not capable of doing this. Moreover, this method is not only applicable for Metal oxides, but also for other materials. Only difference is that annealing should take place in different ambient (e.g. Sulfur for ZnS, CuS or Selenium for ZnSe or CuSe and etc…).Our solar cell was constructed by sandwiching the photoanode electrode which consists of Glass/ITO/TiO2/ZnO sensitized with N719 dye molecules and counter electrode consisting Glass/TiO2/CuO. Between two electrodes iodide electrolyte was injected and it was distributed uniformly by the capillary force. ZnO on top of TiO2 acts as a barrier layer and minimize the carrier recombination from the conduction band of TiO2 to dye or electrolyte. Since ZnO has much higher carrier mobility than TiO2, electrons created as a result of photon absorption in the dyes move to the TiO2 quickly and eventually reach to the load. On the other hand CuO is also promising and can be used instead of very expensive platinum and our results prove that it has very high catalytic activity. Overall device performance was improved substantially when compared with and without ZnO barrier layer and CuO counter electrode performed as good as Pt due to its high catalytic activity and large surface area.