EP02.14.06 : Double Indirect Interlayer Exciton in a MoSe2/WSe2 van der Waals Heterostructure

9:30 AM–9:45 AM Apr 6, 2018 (America - Denver)

PCC North, 200 Level, Room 222 BC

Aubrey Hanbicki1 Hsun-Jen Chuang1 Matthew Rosenberger1 C. Stephen Hellberg1 Saujan Sivaram1 Kathleen McCreary1 I.I. Mazin1 Berend Jonker1

1, U.S. Naval Research Laboratory, Washington, District of Columbia, United States

Tailoring semiconductor heterostructures for specific functionalities has led to varied opto-electronic devices including solar cells, photodetectors, light-emitting diodes and lasers. An emerging class of heterostructures involves monolayer semiconductors such as many of the transition metal dichalcogenides (TMDs) which can be combined to form van der Waals heterostructures (vdWHs). VdWHs offer novel functionalities making them promising hosts for future devices. One unique new heterostructure property is an interlayer exciton (ILE), a spatially indirect, bound electron-hole pair with the electron in one TMD layer and the hole in the other. Here, using state-of-the-art preparation techniques, we are able to resolve emission from the ILE in a MoSe2/WSe2 heterostructure into two distinct peaks separated by 24 meV at zero field. Furthermore, we demonstrate that, when excited with circularly polarized light, the two emission peaks have opposite circular polarizations. Ab initio calculations provide an explanation of this unique and potentially useful property and indicate that it is a result of the indirect character of both electronic transitions. These peaks are double indirect excitons. i.e. indirect in both real and reciprocal space, split by relativistic effects.
This work was supported by core programs at NRL and the NRL Nanoscience Institute, and by the Air Force Office of Scientific Research #AOARD 14IOA018-134141. This work was also supported in part by a grant of computer time from the DoD High Performance Computing Modernization Program at the U.S. Army Research Laboratory Supercomputing Resource Center.