EP02.09.20 : Temperature Dependent Plasmon Enhanced Carrier Generation and Dynamics

5:00 PM–7:00 PM Apr 4, 2018 (America - Denver)

PCC North, 300 Level, Exhibit Hall C-E

Terefe Habteyes1 Sharmin Haq1 Chih-Feng Wang1 Sadhvikas Addamane1 Ganesh Balakrishnan1

1, Univ of New Mexico, Albuquerque, New Mexico, United States

Localized surface plasmon resonances have long been utilized for enhancing spectroscopic signals of molecules, semiconductor quantum dots and thin films. To date, the focus has been on understanding the enhancement effect on the rate of photon absorption and emission (and other non-radiative processes), where the total enhancement is determined by the product of the two rates. In this work, we utilize localized surface plasmon resonances to enhance the rate of photon absorption and exciton generation at a excitation frequency much higher than that of the emission and at a precisely defined distance away from the emitter. We first study the distance dependence of emission enhancement as a function of distance at room temperature. The enhancement factor is then investigated as a function of temperature (10 – 300 K). This approach has allowed us to obtain new insight into the exciton dynamics (generation, diffusion, capture and recombination) in different semiconductor heterostructures. We believe that these novel observations will have far reaching implications and will be shared in this presentation.