Junqiao Wu1 Penghong Ci1 Yabin Chen1

1, University of California, Berkeley, Berkeley, California, United States

In van der Waals (vdW) materials such as transition metal dichalcogenides, physical properties such as band structures are sensitive to interlayer coupling between neighboring monolayers across the vdW gap. If the interlayer coupling can be artificially enhanced, one can effectively modulate the electronic dimensionality, and study scientific problems of emergent physical behavior of the system that would not arise otherwise. We seek to enable, discover and understand emergent electronic behavior of vdW nanostructures by maximally modulating their interlayer coupling with high pressures utilizing diamond anvil cells. By doing so, we quantify the vdW interlayer pressure, enhance carrier mobility, renormalize vibrational spectra of existing 2D materials, and discover new 2D semiconductors.