EP02.04.23 : Emission and Structure of Er Doped Si Rich HfO2 Nanocrystals

5:00 PM–7:00 PM Apr 3, 2018 (America - Denver)

PCC North, 300 Level, Exhibit Hall C-E

Brahim el Filali1 Tetyana Torchynska2 L Khomenkova3

1, UPIITA-IPN, Cdmx, FDM, Mexico
2, ESFM-IPN, CDMX, , Mexico
3, V. Lashkaryov Institute of Semiconductor Physics, Kyiv, , Ukraine

The samples of Er-doped Si-rich-HfO2 films were grown by means of radio-frequency magnetron sputtering method. The samples were divided into three groups: the first group is left as deposited, the second and third groups were treated with thermal annealing at 950oC and 1100oC, respectively, in a nitrogen flow environment. To study the effect of thermal annealing temperatures on the optical and structural properties of the films, the X ray diffraction (XRD), scanning electronic microscopy (SEM), energy dispersive spectroscopy (EDS) and photoluminescence (PL) have been used.