2, ESFM-IPN, CDMX, , Mexico
3, V. Lashkaryov Institute of Semiconductor Physics, Kyiv, , Ukraine
The samples of Er-doped Si-rich-HfO2 films were grown by means of radio-frequency magnetron sputtering method. The samples were divided into three groups: the first group is left as deposited, the second and third groups were treated with thermal annealing at 950oC and 1100oC, respectively, in a nitrogen flow environment. To study the effect of thermal annealing temperatures on the optical and structural properties of the films, the X ray diffraction (XRD), scanning electronic microscopy (SEM), energy dispersive spectroscopy (EDS) and photoluminescence (PL) have been used.