Young Hee Lee1 2

1, Sungkyunkwan Univ, Suwon, , Korea (the Republic of)
2, Center for Integrated Nanostructure Physics, IBS, Suwon, , Korea (the Republic of)

Ultrathin heterostructures using van der Waals two-dimensional layered materials have recently demonstrated superb electronic and optical properties. Although graphene and other 2D transition metal dichalocogenides (TMdCs) demonstrate electronic properties, their electronic properties are often obscured by gate oxides which involve charge scattering and charge doping and degrades carrier mobility. The use of h-BN in 2D heterostructure devices could resolve such matters, for example, mobility of graphene and TMdCs have been greatly enhanced. In this talk, we would like to introduce the role of h-BN as a gate insulator and passivation layer and further discuss its effect in terms of trap charges, doping, contact resistance, and subthreshold swing, and protection from environment.