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Joe Sakai1 Maxime Bavencoffe2 Beatrice Negulescu1 Patrice Limelette1 Jérôme Wolfman1 Hiroshi Funakubo3

1, Univ of Tours, Tours, , France
2, INSA, Blois, , France
3, Tokyo Institute of Technology, Yokohama, , Japan

It is known that reversible pressure-induced insulator-metal (I-M) transition on V2O3 at room temperature is accompanied by a jump of the degree of strain, i.e. c/a ratio [1][2]. This property leads one to consider application for switches and transistors [3]. In such devices, it would be required to control the strain of a V2O3 film in-situ, which is difficult if the film is clamped to a rigid substrate. In the present study, we transferred a V2O3 thin film without a rigid substrate onto a piezoelectric disk, in order to modulate the resistance of the V2O3 film, RV2O3, through its c/a with the piezoelectric effect.
We grew a V2O3 thin film by a pulsed laser deposition technique on a mica substrate, then peeled it off by means of a Scotch tape method, and glued it onto a commercial piezoelectric element. On this sample we measured RV2O3 by a four-probe method as a function of the piezo disk bias, Vpiezo. The RV2O3Vpiezo property showed a butterfly-type curve, which obviously reflected the bias-induced deformation of the piezo material. The change of RV2O3 was more drastic than the estimation assuming a simple elastic deformation of a solid material. Such resistance modification is supposed to be a sign of the strain-induced I-M phase transition characteristic to V2O3, and suggesting a possibility of simple structured piezoelectrically-driven devices.

[1] McWhan et al., Phys. Rev. B 7 (1973) 1920.
[2] Rodolakis et al., Phys. Rev. B 84 (2011) 245113.
[3] Newns et al., J. Appl. Phys. 111 (2012) 084509.

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