Andrea Redaelli1 Fabio Pellizzer2

1, Micron Semiconductor Italia SRL, Vimercate, MB, Italy
2, Micron Semiconductor, Boise, Idaho, United States

In the last decades, the use of electronic systems expanded in many areas of the modern society: networking, mobile devices, personal computers, cloud storage as well as social media are parts of everyone life, becoming strong drivers for the semiconductor market increase. Up to now, memory demand has been satisfied by the optimization and miniaturization of standard memory technologies, i.e. DRAM and NAND Flash. However, with the increasing demand of enhanced cell performance and the reduction of the cell dimension much more difficult than in the past, the usual scaling approach is becoming insufficient. Despite originally considered as a Flash memory replacement, today the phase change memory (PCM) has already arose as the ideal candidate to be used as SCM featuring the required intermediate performances to fill the gap between NAND and DRAM in the system. To this purpose, PCM could solve the cost dilemma and deliver a 3D solution capable of bridging, at least partially, the wide gap that separates it from the incumbent 3D NAND architectures.