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Description
Run-Wei Li1

1, Ningbo Institute of Material Technology and Engineering, Ningbo, , China

Reversibly controlling the nanoscale magnetization at room temperature by electric field means would enable the development of various spintronic devices, in particular, novel magnetic information storage devices. Although several approaches have been developed so far to achieve electrical modulation of magnetization reversal, most of these methods suffer from practical issues that hinder them from direct applications. In this talk, we will present our recent progresses on nanoscale magnetization reversal caused by electric field-induced ion migration in oxide thin films. We observed that in ferrite films the nanoscale magnetization can be reversibly and nonvolatilely reversed at room temperature via an electrical ion-manipulation approach, wherein the application of electric fields with appropriate polarity and amplitude can modulate the size of magnetic domains with different magnetizations up to 70 % [1, 2]. We also utilized the high-throughput synthesis approach, namely, combinatorial substrate epitaxy, to understand the degree of ionic migration in different orientations [3]. It was determined from the analysis that the [110] crystal direction exhibits the maximum nanoscale magnetization reversal ratio. This is mainly attributed to the ease Co2+ migration in the [110] direction under the electric field assisted by a Fe3+ and oxygen vacancies.
Reference:
Xinxin Chen, Xiaojian Zhu, Wen Xiao, Gang Liu, Yuan Ping Feng, Jun Ding, and Run-Wei Li, ACS Nano. 9, 4210–4218 (2015)
Xiaojian Zhu, Jiantao Zhou, Lin Chen, Shanshan Guo, Gang Liu, Run-Wei Li, and Wei D. Lu, Adv. Mater. 28, 7658–7665 (2016)
Pravarthana Dhanapal, Shanshan Guo, Baomin Wang, Huali Yang, Sandeep Agarwal, Qingfeng Zhan, and Run-Wei Li, Appl. Phys. Lett. 111, 162401 (2017)

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