EP03.03.03 : Terahertz Detectors Based on Orderly Aligned GaAs Nanowires Field-Effect Transistors

5:00 PM–7:00 PM Apr 3, 2018 (America - Denver)

PCC North, 300 Level, Exhibit Hall C-E

Heng Zhang1 Senpo Yip1 Johnny Ho1

1, City University of Hong Kong, Hong Kong, , China

Due to the properties of high sensitivity and room-temperature operation, Terahertz detectors based on nano-structured materials, such as semiconductor 1-D nanowires [1] or 2-D nanomaterials [2], have recently been considered as the next generation alternatives to the Terahertz technologies. In order to extend their practical utilizations, our present work reports the fabrication of Terahertz detector arrays based on multiple orderly aligned GaAs nanowires field-effect transistors (FET). The GaAs nanowires were synthesized by chemical vapor deposition growth and then transferred onto the substrate by using a contact printing method [3]. Field-effect transistors were then constructed through photolithographic template-assisted processes. For the terahertz detection, devices were tested under different terahertz sources with various frequencies. Importantly, our GaAs nanowire FET detectors exhibit outstanding photoresponse without any sacrifice of the noise level. Also, as compared to bulk GaAs materials [4] and single nanowire detectors [5], our devices demonstrate the better and more stable properties in terahertz detection.


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