Nowadays, researchers have been spent demanding efforts to discover new high- k dielectric materials for a variety of microelectronic device applications. The new high- k materials for microelectronics should be carefully chosen. Among various high-k dielectrics, Erbium Oxide is a one of the most promising dielectric layer for the future gate dielectric applications, owing to its charming features including the high dielectric constant, large band gap, large band offset value, and good thermodynamic stability with Si. Though various technological applications of Er2O3 dielectrics in electronics, there still exist reliability problem for the usage of this device under radiation environment. Numerous state of the art devices lose their reliability under operation on radiation environments. This research reports the performance of Erbium Oxide MOS capacitors under gamma radiation exposures. Both the structural, electrical and chemical structure of the Er2O3 devices under gamma irradiation has been reported in details. Results demonstrate that the crystalinity of the film increase with increasing the irradiation exposure and surface roughness became smoother with irradiation exposures. In addition, the flatband voltages shift toward more negative values due to accumulation of trapped holes. On the other hand, oxygen deficient oxidation states enhance with radiation exposures which demonstrate radiation basically breaks oxygen containing chemical bonds where mobile holes can be trapped. Briefly, present results demonstrate that structural, electrical and chemical parameters of Erbium Oxide-Based thin film capacitors significantly change under gamma irradiation. Hence, parameters influence should be considered for Er2O3 based device to be used in high radiation field, especially for space and nuclear applications.
Acknowledgement: This work is supported by Ministry of Development of Turkey under Contract Numbers: 2016K121110.