EP04.07.13 : Thermal Stability and Lifetime Assessment of Zirconium ALD Precursor

5:00 PM–7:00 PM Apr 4, 2018 (America - Denver)

PCC North, 300 Level, Exhibit Hall C-E

Kyuyoung Heo1 Joo Hee Son1 Wang-Eun Lee1

1, Korea Research Institute of Chemical Technology, Daejeon, , Korea (the Republic of)

The development of high-k dielectric precursors for advanced semiconductor applications requires molecular engineering and chemical tailoring to obtain specific physical properties and performance capabilities. Some high-k precursors such as organometallic precursors for atomic layer deposition (ALD) that have metal atoms bound to cyclopentadienyls, are stored at a sufficiently high temperature due to their low volatility and consumed through continuous deposition for a commercial semiconductor process. In this case, thermal degradation slowly occurs due to storage at a high temperature for a long time, which causes deterioration of physical properties and reliability of the thin film. However, a technique for assessing the reliability of precursor has been undeveloped and thus causing the development of new precursors to be delayed. In this study, we have developed a reliability evaluation method for cyclopentadienyl tris(dimethylamino) zirconium [CpZr(NMe2)3] through accelerated thermal degradation test under severe environmental conditions in a short period of time. To evaluate the lifetime of precursor, we have investigated the thermal stability and degradation mechanism of precursor by using analysis of NMR and Py-GC/MS and viscosity measurements.