Arvind Shalindar1 Preston Webster2 Rajeev Reddy Kosireddy1 Nathaniel Riordan1 Shane Johnson1

1, Arizona State University, Tempe, Arizona, United States
2, Air Force Research Laboratory (AFRL), Albuquerque, New Mexico, United States

The nonradiative lifetime and spontaneous emission quantum efficiency in molecular beam epitaxy grown bulk InAs0.911Sb0.089 [1] are determined using excitation and temperature dependent photoluminescence measurements. The measurements are performed at temperatures ranging from 15 to 295 K and pump powers ranging from 0.4 mW to 200 mW. The quantum efficiency and lifetimes are inferred from the power law relations that link pump power and integrated photoluminescence predicted by the rate equations [2]. The Shockley-Read-Hall lifetime for bulk InAs0.911Sb0.089 is determined to be 5 ns at room temperature and 70 ns at low temperature. The Auger coefficient is approximately constant over the 50 K to 250 K temperature range, with an average value of 1×10-25 cm6 s−1. The Auger coefficient increases at low temperatures likely due to an increase in carrier occupation as the effective density of states rapidly decreases at low temperature. The quantum efficiency has a peak value of 0.60 at low temperature and decreases as temperature increases, due mainly to a decrease in the radiative recombination rate. At low injection Shockley-Read-Hall recombination dominates and at high injection Auger recombination dominates, as is typical with small bandgap materials. There is a limited excitation and temperature range where radiative recombination dominates.

[1] P. T. Webster, N. A. Riordan, S. Liu, E. H. Steenbergen, R. A. Synowicki, Y.-H. Zhang, S. R. Johnson, J. Appl. Phys. 118, 245706 (2015).
[2] S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, J. Vac. Sci. Technol. B, 25, 1077 (2007).