In this work, we demonstrate a novel method for direct synthesis of patterned graphene on insulators by Cu vapor assisted chemical vapor deposition using a solid aromatic carbon source, 1,2,3,4-tetraphenylnapthalene (TPN), as a precursor. The UV/O3 treatment of the TPN film induces the crosslinking of the TPN film and a strong interaction between substrate and TPN which prevents complete sublimation of carbon sources from the substrate. Substrate adhered-crosslinked TPNs can be successfully grown to graphene on the substrate without any organic contaminants. Graphene synthesized by using this method shows excellent chemical and mechanical stability. This method also allows simultaneous patterning of graphene by selective UV/O3 exposure, therefore it can be used for transparent electrode for electronic devices. The proposed method of synthesizing patterned graphene directly on the insulators would be widely applied for organic and soft hybrid electronic applications.