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MA02.01.02 : Manipulating Charges and Light by Doping Organic and Metal Oxide Semiconductors

11:00 AM–11:30 AM Apr 3, 2018

PCC West, 100 Level, Room 102 BC

Description
Antonio Facchetti2 1

2, Flexterra, Inc., Skokie, Illinois, United States
1, Northwestern University, Evanston, Illinois, United States

In this presentation we will describe the effect of composition and doping type and content on the charge transport and light properties of both organic (ORG) and metal oxide (MO) semiconductor devices. For metal oxide semiconductors, we demonstrated that electron-donor polymers can dope several classes of MOs including In2O3, IZO, and IGZO. These polymer-MO blends exhibit larger electron transport by ~ 2x (e.g., ~ 8 cm2/Vs for In2O3 in a TFT) than those of the starting undoped MO matrices (~ 4 cm2/Vs for In2O3). Furthermore, we used multilayer structures with different degree of doping within each layer to achieve a 2DEG (two-dimensional electron gas) transport, which exhibit electron mobilities ~ 3x (e.g., ~ 11 cm2/Vs for In2O3) than the single layer and undoped matrix (~ 4 cm2/Vs). Doping of ORG semiconductors is explored in a new family of mixed conjugated/deconjugated polymers as well as for tuning light scattering in novel device SERS platforms.

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