Noelia Devesa Canicoba1 2 Kasun Fernando3 Jean-Christophe Blancon1 Fangze Liu1 Laurent Le Brizoual2 Regis Rogel2 Jacky Even4 Bruce Alphenaar3 Wanyi Nie1 Aditya Mohite1

1, Los Alamos National Laboratory, Los Alamos, New Mexico, United States
2, Institute of Electronics and Telecommunications of Rennes, UMR CNRS 6164, Rennes, , France
3, University of Louisville, Louisville, Kentucky, United States
4, Institut National des Sciences Appliquées (INSA) de Rennes, CNRS, UMR 6082, Rennes, , France

Hybrid perovskites are unique class of semiconductors where high crystalline quality thin films with excellent electronic and optical properties can be produced using solution-processing. This has led to a wide range of high-efficiency optoelectronic devices such as solar cells, light emitting diodes and detectors. However, the demonstration of room temperature operated hybrid perovskites-based field effect transistor has remained elusive. This is largely due to the non-reproducibility induced by polar nature of the perovskite structure coupled with ionic movement, which screens the capacitively coupled gate voltage, has also resulted in a hysteresis in the transconductance of FETs.
In this study, we for the first-time report high-performance, hysteresis-free ambipolar FETs using highly crystalline hybrid perovskites thin films, which operate at room temperature. To achieve this, we systematically improved the film composition, morphology, crystallinity as well as investigated the effect of different high-K dielectrics between the perovskites and gate. As a result, we obtained FETs with high trans-conductance with low subthreshold slopes with an on/off ration >104, which is the highest reported to date. Moreover, we observe ambipolar transport at room temperature with a proper choice of the gate-dielectric, which suggests that the Fermi energy can be tuned continuously to inject both electrons and holes into the channel. We anticipate that these results will create a perfect platform for the systematic investigation of the electronic properties of hybrid perovskites materials and also lead to opportunities for exploring perovskite based novel devices such as ultrasensitive photo-transistors and spin FETs, which have been theoretically predicted but never realized.