Abdul Shaik1 Dragica Vasileska1 Igor Sankin3 Dmitry Krasikov3 Daniel Brinkman2 Christian Ringhofer1

1, Arizona State University, Tempe, Arizona, United States
3, First Solar, Perrysburg, Ohio, United States
2, San Jose State University, San Jose, California, United States

Cadmium Telluride is the most successful thin-film photovoltaic technology (TFPV) in today’s market. Understanding of kinetic mechanisms affecting performance / stability of CdTe TFPV on atomistic level is one of key requirements for further reduction of Levelized Cost of Electricity (LCOE) for this technology. Such understanding requires a comprehensive analysis that is only possible by using specialized software. In this work, we present a new generation of a kinetic solver for modeling reaction-diffusion processes in CdTe TFPV. Developed 2-D reaction-diffusion simulator executes on comprehensive defects chemistry models with parameters obtained from the first principles.

In order to simulate metastable processes that occur in the device under standard operating conditions, one first needs to obtain realistic initial conditions for the concentration profiles of charged and neutral defect species in the device stack. In turn, this requires simulation of the process steps used in the actual device fabrication. In this work, we demonstrate use of developed 2D solver to simulate formation of p-type CdTe absorbers by Cu diffusion/activation anneal in chlorinated CdTe thin-films deposited on n++ transparent conductive oxide (TCO) substrate.