Semiconducting metal-halide perovskites present various types of chemical interactions which give them a characteristic fluctuating structure sensitive to the operating conditions of the device, to which they adjust. This makes the control of structure-properties relationship, especially at interfaces where the device realizes its function, the crucial step in order to control devices operation. In particular, given their simple processability at relatively low temperature, one can expect an intrinsic level of structural/chemical disorder of the semiconductor which results in the formation of defects.
Here, first I will review our understanding in the identification of key parameters which must be taken into consideration in order to evaluate the suscettibility of the perovkite crystals (2D and 3D) to the formation of defects, allowing one to proceed through a predictive synthetic procedure. Then, I will discuss the correlation between the presence/formation of defects and the observed semiconductor instabilities under photo-excitation.