Yusuf Leblebici1

1, EPFL, Lausanne, , Switzerland

Resistive RAM (ReRAM) elements based on transition-metal oxide layers are rapidly becoming viable options for nonvolatile multi-level information storage as well as for the implementation of memristive synaptic functions in neuromorphic operations, allowing easy integration with conventional CMOS technologies. In this talk, we will review the ongoing research at EPFL on the realization of various ReRAM elements based on TiOx, TaOx, WOx and HfOx layers tailored for low voltage operation, as well as the design and co-integration of the CMOS peripheral circuitry for the read/write operations. The fabrication and characterization of ReRAM devices are explored using wafer-scale post-processing as well as using individual samples. In particular, the chip embedding platform enabling post-processing of diced samples for fabrication of memristive elements will be discussed, and examples will be provided for potential neuromorphic functions such as spike-timing-dependent-plasticity (STDP) and back-propagation algorithms implemented on cross-bar arrays.