Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are promising candidates for non-volatile information storage for low-cost solution processable electronics.
The technology has gone through a decade of progress. 1 kb memory arrays have been demonstrated. Despite the great progress, the underlying physics has just started to be unraveled. In this contribution, we discuss the device physics of the ferroelectric:semiconductor blend memories, and show that the device functions like a vertical ferroelectric field-effect transistor.
One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here we present a memory arrays fabricated with an air–stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric condition (23 °C and 45% relative humidity). Device yield was 100%. The memory diodes showed on/off ratios greater than 100, and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we show a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.