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Jian Shi1

1, Rensselaer Polytechnic Institute, Troy, New York, United States

In past several years, halide perovskites have been reshaping researchers’ understanding on designing and developing high-performance optoelectronic/electro-optical semiconductors. The mechanical softness of the halide perovskites has broad implications on their versatile properties. In this report, we present our recent understanding and observations of the roles of softness in several aspects – incommensurate epitaxy of the thin film crystals, dimensionality and strain engineering, and hidden carrier dynamics. It shows that compared to hard semiconductors, new paradigms of engineering halide perovskite's physical properties may emerge.

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