The through silicon via (TSV) is one of 3D integration methods to achieve high density interconnects with a good electrical performance and a small form factor on wafer level. In this work, we investigated the TSV filling performance dependent on the functional groups of levelers such as amines, imines, pyridines and pyrrolidones. To elucidate the behavior of functional groups in TSV filling, the mass adsorption rate was measured using quartz crystal microbalance (QCM) and electrochemical QCM (EQCM). It was found that the amines only exhibited the void-free filling in TSV, whereas other functional groups showed the void in TSV. This could be inferred that the amine favored the local adsorption on the top edge of via during electroplating, as evidenced by low mass adsorption rate of QCM and the large difference of mass adsorption rate between QCM and EQCM.