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EP01.03.22 : Highly Uniform and Wafer-Scale Integrated MoS2 Transistors

5:00 PM–7:00 PM Apr 3, 2018

PCC North, 300 Level, Exhibit Hall C-E

Description
Eun-Joo Seo1 Dong-Ho Kim1 Jongjoo Rha1 Byungjin Cho2 Yonghun Kim1

1, Korea Institute of Materials Science, Changwon, , Korea (the Republic of)
2, Chungbuk National University, Cheongju, , Korea (the Republic of)

Molybdenum disulfide (MoS2) with atomic-scale flatness has potential candidate in the applications of high speed and low-power logic devices due to its scalability and intrinsic high-mobility. However, to realize 2D materials as to be viable technology, large-area growth with high quality and uniformity must be pre-requisite. Here, we present the simple and highly uniform growth of four layered molybdenum disulphide (MoS2) on 2 inch wafer scale substrate via the combination strategy of sputtered molybdenum trioxide (MoO3) and post sulfurization of chemical vapour deposition (CVD). The spatial spectroscopic analysis of Raman and PL mapping shows that as-synthesized MoS2 thin film exhibit extremely high uniformity on 2-inch sapphire substrate. With this approach, we assembled almost 1200 MoS2 transistors integrated on Si wafer that yield high density and extremely uniformity (device yield of ~95%, average mobility of ~0.8 cm2V-1s-1, and log on-off ratio of ~4.3). And, the quantitative analysis using pulsed I-V measurement with millisecond time scale could achieve more intrinsic device parameters suppressing the charge trapping of 2D materials-based device.

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