EP01.03.07 : Potential Performance of Zinc Oxide Based Devices—A Transient Electron Transport Analysis

5:00 PM–7:00 PM Apr 3, 2018 (America - Denver)

PCC North, 300 Level, Exhibit Hall C-E

Walid Hadi2 Poppy Siddiqua1 Michael Shur3 Stephen O'Leary1

2, Florida State University, Panama City, Florida, United States
1, University of British Columbia, Kelowna, British Columbia, Canada
3, Rensselaer Polytechnic Institute, Troy, New York, United States

We study how electrons, initially in thermal equilibrium, drift under the action of an applied electric field within bulk wurtzite zinc oxide. We find that the optimal cut-off frequency ranges from around 50.3 GHz when the device thickness is set to 1000 nm to about 11.5 THz when the device thickness is set to 10 nm. These results suggest that zinc oxide holds great promise for future high-speed electron device applications.