EP01.03.06 : Transient Electron Transport Within Bulk Wurtzite Zinc-Magnesium-Oxide Alloys Subjected to High-Fields

5:00 PM–7:00 PM Apr 3, 2018 (America - Denver)

PCC North, 300 Level, Exhibit Hall C-E

Walid Hadi2 Poppy Siddiqua1 Michael Shur3 Stephen O'Leary1

2, Florida State University, Panama City, Florida, United States
1, University of British Columbia, Kelowna, British Columbia, Canada
3, Rensselaer Polytechnic Institute, Troy, New York, United States

We present some recent results on the transient electron transport that occurs within bulk alloys of zinc-magnesium-oxide. These results are obtained using an ensemble semi-classical three-valley Monte Carlo simulation approach. Starting with steady-state electron transport simulations, we find that, for electric field strengths in excess of 180 kV/cm, that the steady-state electron drift velocity associated with these alloys exceeds that associated with bulk wurtzite gallium nitride. We also present evidence that suggests that the negative differential mobility exhibited by the velocity-field characteristic associated with alloys of zinc-magnesium-oxide is not related to transitions to the upper valleys. The transient electron transport that occurs within this alloy is then studied by examining how electrons, initially in thermal equilibrium, respond to the sudden application of a constant electric field. From these transient electron transport results, we conclude that for devices with dimensions smaller than 0.1 microns, gallium nitride based devices will offer the advantage, owing to their superior transient electron transport, while for devices with dimensions greater than 0.1 microns, electron devices based on alloys of zinc-magnesium-oxide will offer the advantage, owing to their superior high-field steady-state electron transport. The device implications of these results will be explored. Our results show that the Monte Carlo simulations of the materials response to the instant change of the electric field could be used for establishing the figures of merit for materials applications for short channel ultra high-speed semiconductor devices.