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Description
Michael Valentin1 2 Alison Guan1 Ariana Nguyen1 I Hsi Lu1 Cindy Merida1 Michael Gomez1 Madan Dubey2 Ludwig Bartels1

1, University of California, Riverside, Riverside, California, United States
2, U.S. Army Research Laboratory, Adelphi, Maryland, United States

Transition metal dichalcogenides (TMDs) are exciting new materials that have received much attention due to their semiconducting properties in the direct bandgap. Well-studied TMDs, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), exhibit a direct bandgap in the monolayer form, but an indirect bandgap in the bulk form. Rhenium disulfide (ReS2), on the other hand, is a new TMD that is unique in its ability to retain a direct bandgap independent of thickness. By using chemical vapor deposition (CVD), few-layer ReS2 is synthesized and characterized by optical methods such as Raman spectroscopy and photoluminescence. We also show characterization results for atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), transmission electron microscope (TEM), and electrical transport to determine thickness, crystallinity, homogeneity, and electrical characteristics for use in future flexible electronics.

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