Among various materials utilized in nanophotonics and nanoelectronics, an increasing attention has been given to the phase change materials (PCMs) with emerging application in resistive switching memories and reconfigurable metadevices. PCMs are desirable due to their reversible phase shift, high endurance, fast switching, and large data retention. Ge2Sb2Te5 (GST) as a chalcogenide PCM is a nonvolatile and bi-stable material with two distinct properties at amorphous and crystalline states.
Owing to the phase transition of GST by both optical and electrical stimuli, it has been integrated into optoelectronic circuits, nonvolatile memories, and tunable photonic metadevices. We introduce a GST-based metamaterial programmable perfect absorber (MPA) and resistive switching memory (ReRAM) with metal-insulator-metal (MIM) structure that contains a sandwiched GST as a high-dielectric material between a metal-coated substrate and square-patterned arrays of the metal electrode. The bottom electrode of ReRAM works as a mirror to eliminate the transmittance, while the patterned metallic layer (top electrode of ReRAM ) acts as plasmon-resonators for MPA. The nanoarrays convey an electric reply relevant to the grounded bottom electrode by intensely coupling to the electric field at a specific resonance frequency. Additionally, the MPA shows promising ReRAM characteristics with reliable and reproducible multi-level storage ability. This work is an attempt to fabricate a reconfigurable and programmable MPA and ReRAM in a simple MIM structure. The structure is analogous to Fabry-Perot (FP) etalon with an ultrathin cavity according to the top electrode arrayed nanoparticles. Furthermore, the reliability of the GST-based nonvolatile device is confirmed by measuring the data retention. The multifunctional nanodevice based on GST has promisingly satisfied the ReRAM and MPA functional requirements. Detailed simulation, fabrication, and characterization of the ReRAM and MPA will be discussed in this presentation.