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Christian Dieleman1 Bruno Ehrler1

1, AMOLF, Amsterdam, , Netherlands

Nanolithography is the main method for manufacturing of integrated circuits and relies on the solubility changes of light-sensitive photoresists. Demand for smaller features has driven the industry from 193 nm (6.4 eV) deep UV (DUV) light to more energetic 13.5 nm (92 eV) extreme UV (EUV) light. This transition requests photoresists able to absorb light effectively at this wavelength and inducing the desired chemistry changes. Inorganic materials are stronger absorbers of EUV than conventional organic resists and a lot of effort has been put into developing metal oxide resist based on e.g. Zr, Hf and Sn. In this work we investigate a new photoresist based on quantum dots (QDs). These quantum dots are nanoparticles of strongly EUV-absorbing elements such as PbS and PbTe. QDs are easy to produce and can be tuned for optical and electrical properties based on size and surface chemistry. Here we present the behavior of these materials under EUV irradiation. We investigate the solubility changes, together with the changes of the surface ligation to elucidate the mechanism of the chemical changes.

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