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Jiatao Zhang1 2

1, Beijing Institute of Technology, Beijing, , China
2, Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, Beijing, , China

The precise control of hetero-interface and doping induced band gap engineering, in colloidal semiconductor based hetero-nanocrystals (metal/semiconductor) and doped nanocrystals, is very important for the efficient energy or charge transfer through hetero-interface and then their novel optoelectronic properties exploration and their new energy, new optoelectronic devices applications. Growth of monocrystalline semiconductor based metal/semiconductor hybrid nanocrystals (core/shell and heterodimer) with modulated composition, morphology and interface strain are the prerequisite for exploring their plasmon-exciton coupling, efficient electron/hole separation, and enhanced photoctalysis properties. We realized nanoscale monocrystalline growth of the semiconductor shell on metal nanocrystals, the precise relative positions and hetero-interface between original building blocks to precisely synthesize metal/semiconductor hetero-nanostructures and hetero-valent doped semiconductor nanostructures, in particular the hetero-valent dopant engineering. These controls enable the fine tuning of doped level, plasmon-exciton coupling, Plasmon enhanced photocatalytic performance and enhanced photovoltaic, electrical properties applications.
References:
1.J. Zhang, Y. Tang, K. Lee, M. Ouyang, Nature 2010, 466, 91.
2.J. Zhang, Y. Tang, K. Lee, M. Ouyang, Science 2010, 327, 1634.
3.Q. Zhao, J. Zhang*, etc., Adv. Mater. 2014, 26, 1387.
4.H.Qian, J. Zhang*, etc., NPG Asian Mater. (2015) 7, e152; doi:10.1038/am.2014.120.
5.J. Gui, J. Zhang*, etc., Angew. Chem. Int. Ed. 2015, 543683-3687.
6.J. Liu, Q. Zhao, J. Zhang*, etc., Adv. Mater. 2015, 27,2753-2761.
7.M. Ji, M. Xu, J. Zhang*, etc. Adv. Mater. 2016, 28, 3094–3101.
8.J. Zhang*, Q. Di, etc. J. Phys. Chem. Lett.2017, 8, 4943-4953. (Invited perspective)

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